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M25P10-AVMB3/X 데이터시트(PDF) 39 Page - Numonyx B.V |
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M25P10-AVMB3/X 데이터시트(HTML) 39 Page - Numonyx B.V |
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39 / 51 page ![]() M25P10-A DC and AC parameters 39/51 Table 17. Instruction times (device grade 3)(1) 1. Only for products with process technology code X. Test conditions specified in Table 10 and Table 12 Symbol Alt. Parameter Min Typ(2)(3) 2. At 85 °C. 3. Preliminary data. Max(3) Unit tW Write Status Register cycle time 8 15 ms tPP (4) 4. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤n ≤ 256). Page Program cycle time (256 bytes) 1.5 5ms Page Program cycle time (n bytes) 0.4+ n*1.1/256 tSE Sector Erase cycle time 1 3 s tBE Bulk Erase cycle time 4.5 10 s |
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