전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

SCT027TO65G3 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 SCT027TO65G3
상세설명  Silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in a TO-LL package
PDF  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SCT027TO65G3 데이터시트(HTML) 5 Page - STMicroelectronics

  SCT027TO65G3 Datasheet HTML 1Page - STMicroelectronics SCT027TO65G3 Datasheet HTML 2Page - STMicroelectronics SCT027TO65G3 Datasheet HTML 3Page - STMicroelectronics SCT027TO65G3 Datasheet HTML 4Page - STMicroelectronics SCT027TO65G3 Datasheet HTML 5Page - STMicroelectronics SCT027TO65G3 Datasheet HTML 6Page - STMicroelectronics SCT027TO65G3 Datasheet HTML 7Page - STMicroelectronics SCT027TO65G3 Datasheet HTML 8Page - STMicroelectronics SCT027TO65G3 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 15 page
background image
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GPDP191120241607SOA
10 2
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp=100µs
tp=10µs
tp=1ms
tp=10ms
IDM
V(BR)DSS
Operation
in
this
area
is
limited
by
R
DS(on)
RDS(on) max.
single pulse
TC = 25 °C
TJ ≤ 175 °C
tp=1µs
tp=10µs
tp=100µs
tp=1ms
tp=10ms
V(BR)DSS
tp=1µs
Figure 2. Maximum transient thermal impedance
GPDP191120241608ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
tp (s)
Single pulse
0.05
duty=0.5
3
2
4
ZthJC
(°C/W)
ton
T
duty = ton / T
RthJC = 0.38 °C/W
Figure 3. Typical output characteristics (TJ = 25 °C)
GPDP191120241609OC25
180
150
120
90
60
30
0
0
1
2
3
4
5
6
ID
(A)
VDS (V)
6 V
8 V
10 V
12 V
14 V
16 V
18 V
VGS= 20 V
Figure 4. Typical output characteristics (TJ = 175 °C)
GPDP191120241609OC175
180
150
120
90
60
30
0
0
1
2
3
4
5
6
6 V
8 V
10 V
12 V
14 V
16 V
VGS= 18, 20 V
ID
(A)
VDS (V)
4 V
Figure 5. Typical transfer characteristics
GPDP191120241609TCH
180
150
120
90
60
30
0
0
4
8
12
16
ID
(A)
VGS (V)
TJ= 25 °C
VDS= 5 V
TJ= 175 °C
Figure 6. Total power dissipation
GPDP191120241610PDT
360
300
240
180
120
60
0
-75
-25
25
75
125
175
PTOT
(W)
TC (°C)
TJ= 175 °C
SCT027TO65G3
Electrical characteristics
DS14846 - Rev 2
page 5/15



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com