Potens semiconductor corp.

Ver.1.01

2

PIH323B

InSb Hall Element

Table 1. Electrical Characteristics （Ta = 25℃）

Item

Symbol

Test Conditions.

Min.

Typ.

Max.

Unit

Hall Voltage

VH

B = 50mT, VC=1V

310

---

415

mV

Input Resistance

Rin

B = 0mT, IC = 0.1mA

240

---

550

Ω

Output Resistance

Rout

B = 0mT, IC = 0.1mA

240

---

550

Ω

Offset Voltage

Vos

B = 0mT, VC = 1V

-7

---

+7

mV

Temp. Coeffi. of VH

αVH

B = 50mT, IC =5mA,

Ta = 0℃ ~ 40℃

---

-1.8

---

%/℃

Temp. Coeffi. of Rin

αRin

B = 0mT, IC =0.1mA,

Ta = 0℃ ~ 40℃

---

-1.8

---

%/℃

Note:

1.

VH = VH−M

− Vos

In which VH-M is the Output Hall Voltage, VH is the Hall Voltage and VOS is the offset Voltage under the

identical electrical stimuli.

2.

������

������ =

1

V������(T1)

×

V������(T3)−V������(T2)

(T3−T2)

× 100

3.

������

������������ =

1

R������������(T1)

×

R������������(T3)−R������������(T2)

(T3−T2)

× 100

T1 = 20℃ , T2 = 0℃ , T3 = 40℃

Rank

VH [mV]

Conditions

G

310 ～ 370

B=50mT, VC=1V

Table 2. Classification of Hall Voltage (VH)