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AP1P02AL 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS

부품명 AP1P02AL
상세설명  -20V P-Channel Enhancement Mode MOSFET
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AP1P02AL
-20V P-Channel Enhancement Mode MOSFET
AP1P02AL REV1.0
永源微電子科技有限公司
Description
The AP1P02AL uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -20V ID =-1.8A
RDS(ON) < 125mΩ @ VGS=-4.5V (Type：95mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP1P02AL
SOT323-3L
1P02AL
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±12
V
ID@TA=25℃
Continuous Drain Current, VGS @ -4.5V1
-1.8
A
ID@TA=70℃
Continuous Drain Current, VGS @ -4.5V1
-0.9
A
IDM
Pulsed Drain Current2
-8.4
A
PD@TA=25℃
Total Power Dissipation3
0.9
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
125
℃
/W
RθJC
Thermal resistance, junction-case
28
℃
/W


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