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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AP2N7002AI 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP2N7002AI 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  60V N-Channel Enhancement Mode MOSFET Package Marking and Ordering Information Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TJ =150℃) TA =25℃ ID 0.3 A TA =100℃ 0.19 Drain Current-Pulsed (Note 1) IDM 0.8 A Maximum Power Dissipation PD 0.35 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 350 ℃ /W AP2N7002AI Description The AP2N7002AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =0.3A RDS(ON) < 3Ω @ VGS=10V ESD Rating：HBM≥2000V Application Battery protection Load switch Uninterruptible power supply 72K AP2N7002AI Product ID Pack SOT23L Marking Qty(PCS) 3000 AP2N7002AI Rve3.8 永源微電子科技有限公司 |
유사한 부품 번호 - AP2N7002AI |
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유사한 설명 - AP2N7002AI |
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