AP2V06LI datasheet(1/7 Pages) APME

부품명	AP2V06LI

상세설명	-60V PP-Channel Enhancement Mode MOSFET

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AP2V06LI

-60V P+P-Channel Enhancement Mode MOSFET

AP2V06LI RVE1.0

永源微電子科技有限公司

Description

The AP2V06LI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -60V ID =-2.8A

RDS(ON) < 205mΩ @ VGS=10V (Type：185mΩ)

Application

Brushless motor

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP2V06LI

SOT23-6L

3

AP2V06LI

000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-60

V

VGS

Gate-Source Voltage

±

20

V

ID@TA=25℃

Continuous Drain Current, VGS @ -10V1

-2.8

A

ID@TA=70℃

Continuous Drain Current, VGS @ -10V1

-1.8

A

IDM

Pulsed Drain Current2

-8.4

A

PD@TA=25℃

Total Power Dissipation3

1.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃

/W

RθJC

Thermal Resistance Junction-Case1

80

℃

/W

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AP2V06LI 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS

AP2V06LI 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS

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