19
0832F–HIREL–02/07
e2v semiconductors SAS 2007
PC7410
9.
Electrical Characteristics
9.1
Static Characteristics
Note:
1. Nominal voltages; see Table 6-3 on page 11 for recommended operating conditions.
2. For processor bus signals, the reference is OV
DD while L2OVDD is the reference for the L2 bus signals.
3. Excludes factory test signals.
4. Capacitance is periodically sampled rather than 100% tested.
5. The leakage is measured for nominal OV
DD and L2OVDD, or both OVDD and L2OVDD must vary in the same direction (for
example, both OVDD and L2OVDD vary by either +5% or -5%).
6. Measured at max OVDD/L2OVDD.
7. Excludes IEEE 1149.1 boundary scan (JTAG) signals.
Table 9-1.
DC Electrical Specifications (see Table 6-3 on page 11 for Recommended Operating Conditions)
Symbol
Characteristic
Nominal Bus
Voltage(1)
Min
Max
Unit
V
IH
Input high voltage
(all inputs except SYSCLK)(2)(3)(8)
1.8
0.65 x (L2)OV
DD
(L2)OV
DD + 0.2
V
VIH
2.5
1.7
(L2)OVDD + 0.2
VIH
3.3
2.0
OVDD + 0.3
V
IL
Input low voltage
(all inputs except SYSCLK)(8)
1.8
-0.3
0.35 x (L2)OV
DD
V
VIL
2.5
-0.3
0.2 x (L2)OVDD
VIL
3.3
-0.3
0.8
CV
IH
SYSCLK input high voltage(2)(8)
1.8
1.5
OV
DD + 0.2
V
CVIH
2.5
2.0
OVDD + 0.2
CVIH
3.3
2.4
OVDD + 0.3
CV
IL
SYSCLK input low voltage(8)
1.8
-0.3
0.2
V
CVIL
2.5
-0.3
0.4
CVIL
3.3
-0.3
0.4
I
IN
Input leakage current,
V
IN = L2OVDD/OVDD
(2)(3)(6)(7)
1.8
–
20
µA
IIN
2.5
–
35
I
IN
3.3
–
70
I
TSI
High-Z (off-state) leakage current,
V
IN = L2OVDD/OVDD
(2)(3)(5)(7)
1.8
–
20
µA
ITSI
2.5
–
35
I
TSI
3.3
–
70
V
OH
Output high voltage, IOH = -5 mA
(8)
1.8
(L2)OV
DD - 0.45
–
V
VOH
2.5
1.7
–
V
OH
3.3
2.4
–
V
OL
Output low voltage, IOL = 5 mA
(8)
1.8
–
0.45
V
VOL
2.5
–
0.4
V
OL
3.3
–
0.4
C
IN
Capacitance, V
IN = 0V, f = 1 MHz
(3)(4)(7)
–6.0
pF
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