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AP5G03DF 데이터시트(PDF) 6 Page - A POWER MICROELECTRONICS |
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AP5G03DF 데이터시트(HTML) 6 Page - A POWER MICROELECTRONICS |
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6 / 10 page ![]() AP5G03DF 30V N+P-Channel Enhancement Mode MOSFET AP5G03DF RVE1.1 永源微電子科技有限公司 P-Channel Typical Characteristics 0 0.3 0.6 0.9 1.2 0 2.5 5 7.5 10 -VSD , Source-to-Drain Voltage (V) QG , Total Gate Charge (nC 0 0.5 1 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature () Fig.3 Forward Characteristics ofReverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ |
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