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AP5G10DF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP5G10DF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 10 page ![]() AP5G10DF 100V N+P-Channel Enhancement Mode MOSFET AP5G10DF REV1.0 永源微電子科技有限公司 Description The AP5G10DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS =100V ID =8.8A RDS(ON) < 120mΩ @ VGS=10V (Type:85mΩ) VDS = -100V ID =-4.8A RDS(ON) < 290mΩ @ VGS=-10V (Type:235mΩ) Application BLDC Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP5G10DF PDFN3X3-8L AP5G10DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 100 -100 V VGS Gate-Source Voltage ±20 ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 8.8 4.8 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 5.9 -3.5 A IDM Pulsed Drain Current2 28 -14.8 A EAS Single Pulse Avalanche Energy3 28 18 mJ PD@TC=25℃ Total Power Dissipation4 23 21.3 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62.5 ℃ /W RθJC Thermal Resistance Junction-Case1 5.4 ℃ /W |
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