AP5H20NF

200V N-Channel Enhancement Mode MOSFET

AP5H20NF REV1.0

永源微電子科技有限公司

Description

The AP5H20NF is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS =200V,ID =5A

RDS(ON) <600mΩ@ VGS=10V （Type：530mΩ）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP5H20NF

PDFN5X6-8L

AP5H20NF XXX YYYY

5000

Absolute Maximum Ratings TC = 25ºC, unless otherwise noted

Symbol

Parameter

Value

Unit

VDSS

Drain-Source Voltage (VGS = 0V)

200

V

ID

Continuous Drain Current

5

A

IDM

Pulsed Drain Current

20

A

VGSS

Gate-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

45

mJ

IAR

Avalanche Current

3

A

EAR

Repetitive Avalanche Energy

3.2

mJ

PD

Power Dissipation (TC = 25ºC)

46

W

RthJC

Thermal Resistance, Junction-to-Case

2.7

ºC/W

RthJA

Thermal Resistance, Junction-to-Ambient

60

ºC/W

TJ, Tstg

Operating Junction and Storage Temperature Range

-55~+150

ºC