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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AP6G02LI 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP6G02LI 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 10 page  AP6G02LI 20V N+P-Channel Enhancement Mode MOSFET AP6G02LI REV1.0 永源微電子科技有限公司 Description The AP6G02LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =7.5A RDS(ON) < 35mΩ @ VGS=4.5V （Type：28mΩ） VDS = -20V ID =-6.8A RDS(ON) < 40mΩ @ VGS=-4.5V（Type：35mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP6G02LI SOT23-6L AP6G02LI 3000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 20 -20 V VGS Gate-Source Voltage ±12 ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 7.5 -6.8 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 5.2 -4.5 A IDM Pulsed Drain Current2 24 -28 A EAS Single Pulse Avalanche Energy3 24 68 mJ PD@TA=25℃ Total Power Dissipation4 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 105 ℃/W RθJC Thermal Resistance Junction-Case1 45 ℃/W |
유사한 부품 번호 - AP6G02LI |
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유사한 설명 - AP6G02LI |
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