AP6P04LI datasheet(1/7 Pages) APME

부품명	AP6P04LI

상세설명	-40V P-Channel Enhancement Mode MOSFET

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AP6P04LI

-40V P-Channel Enhancement Mode MOSFET

AP6P04LI REV1.0

永源微電子科技有限公司

Description

The AP6P04LI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -40V ID =-6.0A

RDS(ON) < 72mΩ @ VGS=-10V (Type：65mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP6P04LI

SOT23-6L

AP6P04LI

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Steady State

Units

VDS

Drain-Source Voltage

-40

V

VGS

Gate-Source Voltage

±20

V

ID@TA=25

℃

Continuous Drain Current, VGS @ -4.5V1

-6.0

A

ID@TA=70

℃

Continuous Drain Current, VGS @ -4.5V1

-3.3

A

IDM

Pulsed Drain Current2

-16.1

A

PD@TA=25

℃

Total Power Dissipation3

1.32

W

PD@TA=70

℃

Total Power Dissipation3

0.84

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃/W

RθJC

Thermal Resistance Junction-Case1

8

℃/W

유사한 부품 번호 - AP6P04LI

제조업체	부품명	데이터시트	상세설명
A POWER MICROELECTRONIC...	AP6P04MSI	697Kb / 7P	-40V P-Channel Enhancement Mode MOSFET REV1.0

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