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M27V101 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 M27V101
상세설명  1 Mbit (128Kb x 8) Low Voltage UV EPROM and OTP EPROM
PDF  15 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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M27V101 데이터시트(HTML) 5 Page - STMicroelectronics

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M27V101
Table 7. Read Mode DC Characteristics (1)
(TA = 0 to 70
°C or –40 to 85°C; VCC = 3.3V ± 10%; VPP =VCC)
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Maximum DC voltage on Output is VCC +0.5V.
Table 8A. Read Mode AC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85°;VCC = 3.3V ± 10%; VPP =VCC)
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurament conditions.
Symbol
Parameter
Test Condition
Min
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VCC
±10
µA
ILO
Output Leakage Current
0V
≤ VOUT ≤ VCC
±10
µA
ICC
Supply Current
E=VIL,G= VIL,IOUT = 0mA,
f = 5MHz, VCC ≤ 3.6V
15
mA
ICC1
Supply Current (Standby) TTL
E= VIH
1mA
ICC2
Supply Current (Standby) CMOS
E> VCC –0.2V, VCC ≤ 3.6V
20
µA
IPP
Program Current
VPP =VCC
10
µA
VIL
Input Low Voltage
–0.3
0.8
V
VIH
(2)
Input High Voltage
2
VCC +1
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V
VOH
Output High Voltage TTL
IOH = –400µA
2.4
V
Output High Voltage CMOS
IOH = –100µA
Vcc – 0.7V
V
Symbol
Alt
Parameter
Test Condition
M27V101
Unit
-90 (3)
-100
Min
Max
Min
Max
tAVQV
tACC
Address Valid to Output Valid
E = VIL,G= VIL
90
100
ns
tELQV
tCE
Chip Enable Low to Output Valid
G= VIL
90
100
ns
tGLQV
tOE
Output Enable Low to Output Valid
E=VIL
45
50
ns
tEHQZ
(2)
tDF
Chip Enable High to Output Hi-Z
G = VIL
030030
ns
tGHQZ
(2)
tDF
Output Enable High to Output Hi-Z
E=VIL
030030
ns
tAXQX
tOH
Address Transition to Output
Transition
E=VIL,G= VIL
00
ns
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommended that a 0.1
µF ceramic
capacitor be used on every device between VCC
and VSS. This should be a high frequency capaci-
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7
µF bulk electrolytic capacitor should be
used between VCC and VSS for every eight devic-
es. The bulk capacitor should be located near the
power supply connection point. The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.



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