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AP8P03LI 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP8P03LI 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP8P03LI -30V P-Channel Enhancement Mode MOSFET AP8P03LI RVE1.0 永源微電子科技有限公司 Description The AP8P03LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =8A RDS(ON) < 35mΩ @ VGS=10V (Type:24mΩ) Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP8P03LI SOT-23-6L AP8P03LI 3000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -8 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -5.8 A IDM Pulsed Drain Current2 -30 A EAS Single Pulse Avalanche Energy3 125 mJ PD@TC=25℃ Total Power Dissipation4 29 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 125 ℃ /W RθJC Thermal Resistance Junction-Case1 3.6 ℃ /W |
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