AP10G04DF datasheet(1/9 Pages) APME

부품명	AP10G04DF

상세설명	40V NP-Channel Enhancement Mode MOSFET

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AP10G04DF

40V N+P-Channel Enhancement Mode MOSFET

AP10G04DF RVE1.0

臺灣永源微電子科技有限公司

Description

The AP10G04DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 40V ID =9.8A

RDS(ON) < 17mΩ @ VGS=10V

VDS = -40V ID =-7.5A

RDS(ON) < 45mΩ @ VGS=-10V

Application

Wireless charging

Boost driver

Brushless motor

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP10G04DF

PDFN3*3-8L

AP10G04DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

N-Ch

P-Ch

VDS

Drain-Source Voltage

40

-40

V

VGS

Gate-Source Voltage

±

20

±

20

V

ID@TA=25℃

Continuous Drain Current, VGS @ 10V1

9.8

-7.5

A

ID@TA=70℃

Continuous Drain Current, VGS @ 10V1

5.2

-4.8

A

IDM

Pulsed Drain Current2

23

-22

A

EAS

Single Pulse Avalanche Energy3

16.2

39

mJ

IAS

Avalanche Current

18

-28

A

PD@TA=25℃

Total Power Dissipation4

1.67

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

75

℃

/W

RθJC

Thermal Resistance Junction-Case1

30

℃

/W

유사한 부품 번호 - AP10G04DF

제조업체	부품명	데이터시트	상세설명
A POWER MICROELECTRONIC...	AP10G04S	1Mb / 10P	40V NP-Channel Enhancement Mode MOSFET REV1.2

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