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AP10H04DF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP10H04DF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP10H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP10H04DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =12.5A RDS(ON) < 8.5mΩ @ VGS=10V Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP10H04DF PDFN3*3-8L AP10H04DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current1 12.5 A ID@TC=100℃ Continuous Drain Current1 8.5 A IDM Pulsed Drain Current2 60 A EAS Single Pulse Avalanche Energy3 48 mJ IAS Avalanche Current 31 A PD@TC=25℃ Total Power Dissipation4 27.8 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient (Steady State)1 60 ℃/W RθJC Thermal Resistance Junction-Case1 4.5 ℃/W AP10H04DF RVE1.0 永源微電子科技有限公司 |
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