AP10H15DF datasheet(1/7 Pages) APME

부품명	AP10H15DF

상세설명	150V NN-Channel Enhancement Mode MOSFET

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AP10H15DF

150V N+N-Channel Enhancement Mode MOSFET

AP10H15DF REV1.0

永源微電子科技有限公司

Description

The AP10H15DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 150V ID =10A

RDS(ON) < 285mΩ@ VGS=10V （Type：230mΩ）

Application

Automative lighting

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP10H15DF

PDFN3*3-8L

AP10H15DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

150

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Drain Current, VGS @ 10V

10

A

ID@TC=100

℃

Drain Current, VGS @ 10V

6.1

A

IDM

Pulsed Drain Current1

30

A

PD@TC=25

℃

Total Power Dissipation

32.1

W

PD@TA=25

℃

Total Power Dissipation3

20.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Maximum Thermal Resistance, Junctionambient

85

℃/W

RθJC

Maximum Thermal Resistance, Junction-case

3.9

℃/W

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AP10H15DF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS

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