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AP12P05D 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS

부품명 AP12P05D
상세설명  -55V P-Channel Enhancement Mode MOSFET
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AP12P05D
-55V P-Channel Enhancement Mode MOSFET
AP12P05D RVE1.0
永源微電子科技有限公司
Description
The AP12P05D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -55V ID =-12A
RDS(ON) < 120mΩ @ VGS=-10V (Type：95mΩ)
Application
Battery switch
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP12P05D
TO-252-3L
AP12P05D XXX YYY
2500
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-55
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25
℃
Continuous Drain Current, VGS @ -10V1
-12
A
ID@TA=70
℃
Continuous Drain Current, VGS @ -10V1
-8.4
A
IDM
Pulsed Drain Current2
-36
A
PD@TA=25
℃
Total Power Dissipation3
12
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃/W
RθJC
Thermal Resistance Junction-Case1
80
℃/W


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