AP15G02DF datasheet(1/10 Pages) APME

부품명	AP15G02DF

상세설명	20V NP-Channel Enhancement Mode MOSFET

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AP15G02DF

20V N+P-Channel Enhancement Mode MOSFET

AP15G02DF REV1.0

永源微電子科技有限公司

Description

The AP15G02DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =15.5A

RDS(ON) < 35mΩ @ VGS=4.5V （Type：22mΩ）

VDS = -20V ID =-14.8A

RDS(ON) < 35mΩ @ VGS=-4.5V（Type：28mΩ）

Application

High Frequency Circuit

low-power consumption

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP15G02DF

PDFN3*3-8L

AP15G02DF XXX YYYY

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

20

-20

V

VGS

Gate-Source Voltage

±

12

±

12

V

ID@TA=25℃

Continuous Drain Current, VGS @ 10V1

15.5

-14.8

A

ID@TA=70℃

Continuous Drain Current, VGS @ 10V1

12.2

-11.5

A

IDM

Pulsed Drain Current2

48

-44

A

EAS

Single Pulse Avalanche Energy3

24

78

mJ

PD@TA=25℃

Total Power Dissipation4

1.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

60

℃

/W

유사한 부품 번호 - AP15G02DF

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A POWER MICROELECTRONIC...	AP15G03DF	2Mb / 10P	30V NP-Channel Enhancement Mode MOSFET
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AP15G02DF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS

AP15G02DF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS

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