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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AP15G10GD 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP15G10GD 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 10 page  AP15G10GD 100V N+P-Channel Enhancement Mode MOSFET AP15G10GD RVE1.0 永源微電子科技有限公司 Description The AP15G10GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS =100V ID =17.8A RDS(ON) < 120mΩ @ VGS=10V （Type：85mΩ） VDS = -100V ID =-12.8A RDS(ON) < 290mΩ @ VGS=-10V （Type：235mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP15G10GD TO-252-4L AP15G10GD XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 100 -100 V VGS Gate-Source Voltage ±20 ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 17.8 12.8 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 8.9 -7.5 A IDM Pulsed Drain Current2 52.5 -38.4 A EAS Single Pulse Avalanche Energy3 28 18 mJ IAS Avalanche Current 7 6 A PD@TC=25℃ Total Power Dissipation4 23 21.3 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62.5 ℃ /W RθJC Thermal Resistance Junction-Case1 5.4 ℃ /W |
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