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AP20G03GD 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP20G03GD 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 10 page ![]() AP20G03GD 30V N+P-Channel Enhancement Mode MOSFET AP20G03GD RVE1.0 永源微電子科技有限公司 Description The AP20G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =25A RDS(ON) < 25mΩ @ VGS=10V (Type:15mΩ) VDS = -30V ID =-18A RDS(ON) < 42mΩ @ VGS=-10V(Type:36mΩ) Application BLDC Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP20G03GD TO-252-4L AP20G03GD XXX YYYY 2500 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ± 20 ± 20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 25 -18 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 10 -8.1 A IDM Pulsed Drain Current2 52 -40 A EAS Single Pulse Avalanche Energy3 22 22 mJ IAS Avalanche Current 21 11 A PD@TA=25℃ Total Power Dissipation4 18 18 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 85 ℃ /W RθJC Thermal Resistance Junction-Case1 60 ℃ /W |
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