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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AP20G04GD 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP20G04GD 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 10 page  AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET AP20G04GD REV1.1 永源微電子科技有限公司 Description The AP20G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =20A RDS(ON) < 20mΩ @ VGS=10V （Type：15mΩ） VDS = -40V ID =-18A RDS(ON) < 36mΩ @ VGS=-10V （Type：32mΩ） Application Wireless charging Boost driver Brushless motor Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP20G04GD TO-252-4L AP20G04GD XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units N-Ch P-Ch VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ±20 ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 22 21 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 15 -16 A IDM Pulsed Drain Current2 65 -60 A EAS Single Pulse Avalanche Energy3 158 152 mJ PD@TA=25℃ Total Power Dissipation4 10 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62.5 ℃ /W RθJC Thermal Resistance Junction-Case1 5 ℃ /W |
유사한 부품 번호 - AP20G04GD |
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유사한 설명 - AP20G04GD |
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