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AP20N02BF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP20N02BF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP20N02BF 20V N-Channel Enhancement Mode MOSFET AP20N02BF RVE1.1 永源微電子科技有限公司 Description The AP20N02BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =20A RDS(ON) < 15mΩ@ VGS=4.5V (Type:11mΩ) Application solar road lights Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP20N02BF QFN2*2-6L AP20N02BF XXX YYYY 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 20 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 13 A IDM Pulsed Drain Current2 50 A EAS Single Pulse Avalanche Energy3 8.1 mJ IAS Avalanche Current 12.7 A PD@TC=25℃ Total Power Dissipation4 20.8 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 125 ℃ /W RθJC Thermal Resistance Junction-Case1 6 ℃ /W |
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