AP20N06DF

60V N-Channel Enhancement Mode MOSFET

AP20N06DF REV1.0

永源微電子科技有限公司

Description

The AP20N06DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =28A

RDS(ON) <35mΩ @ VGS=10V（Type：30mΩ）

Application

LED lamp

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP20N06DF

PDFN3X3-8L

AP20N06DF XXX YYYY

5000

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

60

V

VGSS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

28

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

13

A

IDM

Pulsed Drain Current

74

A

IAS

Avalanche Current

13

A

EAS

Single Pulsed Avalanche Energy

22

mJ

PD@TC=25

℃

Power Dissipation

37

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃/W

RθJC

Thermal Resistance Junction-Case1

4

℃/W