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AP20N10DF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP20N10DF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP20N10DF 100V N-Channel Enhancement Mode MOSFET AP20N10DF REV1.0 永源微電子科技有限公司 Description The AP20N10DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =20A RDS(ON) < 85mΩ@ VGS=10V (Type:68mΩ) Application Automative lighting Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP20N10DF PDFN3X3-8L AP20N10DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Drain Current, VGS @ 10V 20 A ID@TC=100℃ Drain Current, VGS @ 10V 10 A IDM Pulsed Drain Current1 58 A EAS Single Pulse Avalanche Energy3 72 mJ IAS Avalanche Current 11 A PD@TC=25℃ Total Power Dissipation 41.7 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Maximum Thermal Resistance, Junctionambient 62.5 ℃/W RθJC Maximum Thermal Resistance, Junction-case 3 ℃/W |
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