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AP20P02BF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP20P02BF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP20P02BF -20V P-Channel Enhancement Mode MOSFET AP20P02BF RVE1.0 永源微電子科技有限公司 Description The AP20P02BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-20A RDS(ON) < 18mΩ @ VGS=-4.5V (Type:12mΩ) Application electronic cigarette Load switch Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP20P02BF QFN2*2-6L AP20P02BF XXX YYYY 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID@TC=25℃ Continuous Drain Current, VGS @ -4.5V1 -20 A ID@TC=70℃ Continuous Drain Current, VGS @ -4.5V1 -11.4 A IDM Pulsed Drain Current2 -60 A PD@TC=25℃ Total Power Dissipation3 2.4 W PD@TC=70℃ Total Power Dissipation3 19 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 52 ℃ /W RθJC Thermal Resistance Junction-Case1 6.9 ℃ /W |
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