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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AP20P02DF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP20P02DF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 6 page  AP20P02DF -20V P-Channel Enhancement Mode MOSFET AP20P30DF Rve3.8 臺灣永源微電子科技有限公司 The AP20P02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-20A RDS(ON) < 9mΩ @ VGS=-10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP20P02DF 20P30 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ± 8 V ID@TC=25℃ Continuous Drain Current, VGS @ -4.5V1 -20 A ID@TC=70℃ Continuous Drain Current, VGS @ -4.5V1 -18 A IDM Pulsed Drain Current2 -100 A PD@TC=25℃ Total Power Dissipation3 29 W PD@TC=70℃ Total Power Dissipation3 19 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 75 ℃ /W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) 40 ℃ /W RθJC Thermal Resistance Junction-Case1 4.2 ℃ /W Description PDFN3*3-8L |
유사한 부품 번호 - AP20P02DF |
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유사한 설명 - AP20P02DF |
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