AP20P04S

-40V P-Channel Enhancement Mode MOSFET

AP20P04S REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250µA

-40

-

-

V

lGSS

Gate-body Leakage current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ=25°C

VDS = -40V, VGS = 0V

-

-

-1

μA

Zero Gate Voltage Drain Current TJ=100°C

-

-

-100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250µA

-1.0

-1.6

-2.5

V

RDS(on)

Drain-Source on-Resistance4

VGS = -10V, ID = -20A

-

7.5

9.0

mΩ

VGS = -4.5V, ID = -15A

-

9.3

12

gfs

Forward Transconductance4

VDS= -10V, ID= -20A

-

104

-

S

Ciss

Input Capacitance

VDS = -20V, VGS =0V, f

=1MHz

-

5295

-

pF

Coss

Output Capacitance

-

430

-

Crss

Reverse Transfer Capacitance

-

385

-

Rg

Gate Resistance

f =1MHz

-

4.1

-

Ω

Qg

Total Gate Charge

VGS = -10V, VDS = -20V,

ID= -20A

-

110

-

nC

Qgs

Gate-Source Charge

-

12.5

-

Qgd

Gate-Drain Charge

-

23

-

td(on)

Turn-on Delay Time

VGS = -10V, VDD = -20V,

RG = 3Ω, ID= -20A

-

16.8

-

ns

tr

Rise Time

-

10

-

td(off)

Turn-off Delay Time

-

65

-

tf

Fall Time

-

17

-

trr

Body Diode Reverse Recovery Time

IF = -20A, dI/dt= -100A/µs

-

42

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

29

-

nC

VSD

Diode Forward Voltage4

IS = -20A, VGS = 0V

-

-

-1.2

V

IS

Continuous Source Current TC=25°C

-

-

-20

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is V DD =-32V,VGS =-10V,L=0.1mH,I AS =-50A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation