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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AP20P06PT 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP20P06PT 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 8 page  AP20P06PIT -60V P-Channel Enhancement Mode MOSFET AP20P06P/T RVE1.0 永源微電子科技有限公司 Description The AP20N06P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-20A RDS(ON) < 58mΩ @ VGS=10V (Type：47mΩ) Application Brushless motor Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP20P06P TO220-3L AP20P06P XXX YYYY 1000 AP20P06T TO263-3L AP20P06TXXX YYYY 800 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ± 20 V ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -20 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -13 A IDM Pulsed Drain Current2 -60 A IAS Avalanche Current -26.6 A PD@TA=25℃ Total Power Dissipation4 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62.5 ℃ /W RθJC Thermal Resistance Junction-Case1 36 ℃ /W |
유사한 부품 번호 - AP20P06PT |
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유사한 설명 - AP20P06PT |
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