AP30G04NF datasheet(1/10 Pages) APME

부품명	AP30G04NF

상세설명	40V NP-Channel Enhancement Mode MOSFET

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AP30G04NF

40V N+P-Channel Enhancement Mode MOSFET

AP30G04NF REV1.0

永源微電子科技有限公司

Description

The AP30G04NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS =40V ID =38A

RDS(ON) < 10mΩ @ VGS=10V （Type：8.0mΩ）

VDS = -40V ID =-35A

RDS(ON) < 18mΩ @ VGS=-10V （Type：13mΩ）

Application

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP30G04NF

PDFN5X6-8L

AP30G04NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

40

-40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

38

-35

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

31

-29

A

IDM

Pulsed Drain Current2

144

-129

A

EAS

Single Pulse Avalanche Energy3

128

185

mJ

IAS

Avalanche Current

16

-18

A

PD@TC=25℃

Total Power Dissipation4

48

51.3

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

25

℃/W

RθJC

Thermal Resistance Junction-Case1

2.3

℃/W

유사한 부품 번호 - AP30G04NF

제조업체	부품명	데이터시트	상세설명
A POWER MICROELECTRONIC...	AP30G04GD	850Kb / 10P	40V NP-Channel Enhancement Mode MOSFET REV1.0

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유사한 설명 - AP30G04NF

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