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AP30N02DF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP30N02DF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP30N02DF 20V N-Channel Enhancement Mode MOSFET AP30N02DF RVE1.0 永源微電子科技有限公司 Description The AP30N02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =30A RDS(ON) < 15mΩ @ VGS=4.5V (Type:11mΩ) Application solar road lights Load switch 3.3V MCU Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP30N02DF PDFN3X3-8L AP30N02DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 30 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 13 A IDM Pulsed Drain Current2 50 A EAS Single Pulse Avalanche Energy3 8.1 mJ IAS Avalanche Current 12.7 A PD@TC=25℃ Total Power Dissipation4 20.8 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 62 ℃ /W RθJC Thermal Resistance Junction-Case1 6 ℃ /W |
유사한 부품 번호 - AP30N02DF |
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