AP30N10DF datasheet(1/7 Pages) APME

부품명	AP30N10DF

상세설명	100V N-Channel Enhancement Mode MOSFET

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AP30N10DF

100V N-Channel Enhancement Mode MOSFET

AP30N10DF REV1.0

永源微電子科技有限公司

Description

The AP30N10DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 100V ID =30A

RDS(ON) < 40mΩ@ VGS=10V （Type：33mΩ）

Application

Automative lighting

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP30N10DF

PDFN3*3-8L

AP30N10DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Drain Current, VGS @ 10V

30

A

ID@TC=100℃

Drain Current, VGS @ 10V

13

A

ID@TA=25℃

Drain Current, VGS @ 10V

6.0

A

ID@TA=70℃

Drain Current, VGS @ 10V

5.0

A

IDM

Pulsed Drain Current1

90

A

PD@TC=25℃

Total Power Dissipation

34.7

W

PD@TA=25℃

Total Power Dissipation3

1.47

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Maximum Thermal Resistance, Junctionambient

85

℃

/W

RθJC

Maximum Thermal Resistance, Junction-case

3.6

℃

/W

유사한 부품 번호 - AP30N10DF

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A POWER MICROELECTRONIC...	AP30N10BD	758Kb / 7P	100V N-Channel Enhancement Mode MOSFET REV1.0
	AP30N10NF	1Mb / 7P	100V N-Channel Enhancement Mode MOSFET REV1.0
	AP30N10Y	1Mb / 8P	100V N-Channel Enhancement Mode MOSFET

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유사한 설명 - AP30N10DF

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AP30N10DF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS

AP30N10DF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS

유사한 부품 번호 - AP30N10DF

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