M28C16B datasheet(4/17 Pages) STMICROELECTRONICS

4 / 17 page

M28C16B, M28C17B

4/17

Table 3. Operating Modes 1

Note: 1. 0=

VIL; 1=VIH; X = VIH or VIL; V=12V ± 5%.

Mode

DQ0-DQ7

Stand-by

Hi-Z

Output Disable

Hi-Z

Write Disable

Hi-Z

Read

Data Out

Write

Data In

Chip Erase

Hi-Z

end of the cycle can be detected by reading the

status of the Data Polling and the Toggle Bit func-

tions on DQ7 and DQ6.

Page Write

The Page Write mode allows up to 64 bytes to be

written on a single page in a single go. This is

achieved through a series of successive Write op-

erations, no two of which are separated by more

than the tWLQ5H value (as specified in Table 10A).

The page write can be initiated during any byte

write operation. Following the first byte write in-

struction the host may send another address and

data with a minimum data transfer rate of:

1/tWLQ5H.

The internal write cycle can start at any instant af-

ter tWLQ5H. Once initiated, the write operation is in-

ternally timed, and continues, uninterrupted, until

completion.

All bytes must be located on the same page ad-

dress (A10-A6 must be the same for all bytes).

Otherwise, the Page Write operation is not execut-

ed.

As with the single byte Write operation, described

above, the DQ5, DQ6 and DQ7 lines can be used

to detect the beginning and end of the internally

controlled phase of the Page Write cycle.

Software Data Protection (SDP)

The device offers a software-controlled write-pro-

tection mechanism that allows the user to inhibit all

write operations to the device. This can be useful

for protecting the memory from inadvertent write

cycles that may occur during periods of instability

(uncontrolled bus conditions when excessive

noise is detected, or when power supply levels are

outside their specified values).

By default, the device is shipped in the “unprotect-

ed” state: the memory contents can be freely

changed by the user. Once the Software Data Pro-

tection Mode is enabled, all write commands are

Table 4A. Power-Up Timing1 for M28CxxB (5V range)

(TA = 0 to 70 °C or -40 to 85 °C; VCC = 4.5 to 5.5 V)

Note: 1. Sampled only, not 100% tested.

Table 4B. Power-Up Timing1 for M28CxxB-W (3V range)

(TA = 0 to 70 °C or -40 to 85 °C; VCC = 2.7 to 3.6 V)

Note: 1. Sampled only, not 100% tested.

Symbol

Parameter

Min.

Max.

Unit

tPUR

Time Delay to Read Operation

µs

tPUW

Time Delay to Write Operation (once VCC

≥ VWI)

VWI

Write Inhibit Threshold

3.0

4.2

Symbol

Parameter

Min.

Max.

Unit

tPUR

Time Delay to Read Operation

µs

tPUW

Time Delay to Write Operation (once VCC

≥ VWI)15

VWI

Write Inhibit Threshold

1.5

2.5

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