AP40P04D datasheet(1/8 Pages) APME

부품명	AP40P04D

상세설명	-40V P-Channel Enhancement Mode MOSFET

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AP40P04DIY

-40V P-Channel Enhancement Mode MOSFET

AP40P04D/Y REV1.1

永源微電子科技有限公司

Description

The AP40P04D/Y uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -40V ID =-40 A

RDS(ON) < 18mΩ @ VGS=-10V (Type：13mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40P04D

TO-252-3L

AP40P04D XXX YYYY

2500

AP40P04Y

TO-251S-3L

AP40P04Y XXX YYYY

4000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ -10V1

-40

A

ID@TC=100℃

Continuous Drain Current, VGS @ -10V1

-23

A

IDM

Pulsed Drain Current2

-120

A

EAS

Single Pulse Avalanche Energy3

125

mJ

PD@TC=25℃

Total Power Dissipation4

25

W

PD@TA=25℃

Total Power Dissipation4

16

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62

℃/W

RθJC

Thermal Resistance Junction-Case1

5

℃/W

유사한 부품 번호 - AP40P04D

제조업체	부품명	데이터시트	상세설명
A POWER MICROELECTRONIC...	AP40P04D	1Mb / 7P	-40V P-Channel Enhancement Mode MOSFET

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