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AP50H04DF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP50H04DF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP50H04DF 40V N+N-Channel Enhancement Mode MOSFET AP50H04DF RVE1.0 永源微電子科技有限公司 Description The AP50H04DF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =52A RDS(ON) < 8.5mΩ @ VGS=10V (Type:6.9mΩ) Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP50H04DF PDFN3*3-8L AP50H04DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TC=25 ℃ Continuous Drain Current1 52 A ID@TC=100 ℃ Continuous Drain Current1 38.5 A IDM Pulsed Drain Current2 150 A EAS Single Pulse Avalanche Energy3 48 mJ IAS Avalanche Current 31 A PD@TC=25 ℃ Total Power Dissipation4 27.8 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient (Steady State)1 85 ℃/W RθJC Thermal Resistance Junction-Case1 4.5 ℃/W |
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