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AP50N03BF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP50N03BF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP50N03BF 30V N-Channel Enhancement Mode MOSFET AP50N03BF RVE1.0 永源微電子科技有限公司 Description The AP50N03BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =50A RDS(ON) < 10mΩ @ VGS=10V (Type:8.0mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP50N03BF QFN2*2-6L AP50N03BF XXXX YYYY 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25 ℃ Continuous Drain Current, VGS @ 10V1 50 A ID@TC=100 ℃ Continuous Drain Current, VGS @ 10V1 12 A IDM Pulsed Drain Current2 112 A EAS Single Pulse Avalanche Energy3 24.2 mJ IAS Avalanche Current 10 A PD@TC=25 ℃ Total Power Dissipation 37.5 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ RθJA Thermal Resistance Junction-Ambient 1 125 ℃/W RθJC Thermal Resistance Junction-Case1 4 ℃/W |
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