AP50N06CD

60V N-Channel Enhancement Mode MOSFET

AP50N06CD REV1.0

永源微電子科技有限公司

Description

The AP50N06CD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =48A

RDS(ON) <18mΩ @ VGS=10V（Type：14.5mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP50N06CD

TO-252-3L

AP50N06CD XXX YYYY

2500

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

48

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

20

A

IDM

Pulsed Drain Current2

150

A

EAS

Single Pulse Avalanche Energy3

51.2

mJ

IAS

Avalanche Current

25

A

PD@TC=25

℃

Total Power Dissipation4

44.6

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62

℃/W

RθJC

Thermal Resistance Junction-Case1

2.1

℃/W