M28F201 datasheet(2/21 Pages) STMICROELECTRONICS

2 / 21 page

AI00638C

A13

A10

DQ0

DQ7

A14

M28F201

A11

Figure 2A. LCC Pin Connections

DQ0

A13

A10

DQ7

A14

A11

DQ5

DQ1

DQ2

DQ3

DQ4

DQ6

A17

A16

A12

VPP

VCC

A15

AI00639C

M28F201

(Normal)

VSS

Figure 2B. TSOP Pin Connections

DEVICE OPERATION

The M28F201 FLASH Memory product employs a

technology similar to a 2 Megabit EPROM but add

to the device functionality by providing electrical

erasure and programming. These functions are

managed by a command register. The functions

that are addressed via the command register de-

pend on the voltage applied to the VPP, program

voltage, input. When VPP is less than or equal to

6.5V, the command register is disabled and the

M28F201 functions as a read only memory provid-

ing operating modes similar to an EPROM (Read,

Output Disable, Electronic Signature Read and

Standby). When VPP is raised to 12V the command

Erase and Program operations.

READ ONLY MODES, VPP

≤ 6.5V

For all Read Only Modes, except Standby Mode,

the Write Enable input W should be High. In the

Standby Mode this input is ’don’t care’.

Read Mode. The M28F201 has two enable inputs,

E and G, both of which must be Low in order to

output data from the memory. The Chip Enable (E)

is the power control and should be used for device

selection. Output Enable (G) is the output control

and should be used to gate data on to the output,

independant of the device selection.

DQ0

A13

A10

DQ7

A14

A11

DQ5

DQ1

DQ2

DQ3

DQ4

DQ6

A17

A16

A12

VPP

VCC

A15

AI00640D

M28F201

(Reverse)

VSS

Figure 2C. TSOP Reverse Pin Connections

2/21

M28F201

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