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AP60H04NF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS

부품명 AP60H04NF
상세설명  40V NN-Channel Enhancement Mode MOSFET
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제조업체  APME [A POWER MICROELECTRONICS]
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AP60H04NF
40V N+N-Channel Enhancement Mode MOSFET
AP60H04NF REV1.1
永源微電子科技有限公司
Description
The AP60H04NF uses advanced APM-SGT V technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =60A
RDS(ON) < 5.8mΩ @ VGS=10V （Type：4.8mΩ）
Ciss≈1204 PF
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP60H04NF
PDFN5*6-8L
AP60H04NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±
20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
60
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
40
A
IDM
Pulsed Drain Current2
250
A
EAS
Single Pulse Avalanche Energy3
36
mJ
IAS
Avalanche Current
27
A
PD@TA=25℃
Total Power Dissipation4
42
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
25
℃
/W
RθJC
Thermal Resistance Junction-Case1
3.0
℃
/W


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