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AP60N03DF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP60N03DF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP60N03DF 30V N-Channel Enhancement Mode MOSFET AP60N03DF RVE1.2 永源微电子科技有限公司 Description The AP60N03DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =60A RDS(ON) < 8.5mΩ @ VGS=10V (Type:6.0mΩ) Application VBUS Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP60N03DF PDFN3*3-8L AP60N03DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25 ℃ Continuous Drain Current, VGS @ 10V1 60 A ID@TC=100 ℃ Continuous Drain Current, VGS @ 10V1 29 A IDM Pulsed Drain Current2 92 A EAS Single Pulse Avalanche Energy3 57.8 mJ IAS Avalanche Current 34 A PD@TC=25 ℃ Total Power Dissipation4 29 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 62.5 ℃/W RθJC Thermal Resistance Junction-Case1 4.32 ℃/W |
유사한 부품 번호 - AP60N03DF |
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유사한 설명 - AP60N03DF |
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