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AP60N04DF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS

부품명 AP60N04DF
상세설명  40V N-Channel Enhancement Mode MOSFET
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제조업체  APME [A POWER MICROELECTRONICS]
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AP60N04DF
40V N-Channel Enhancement Mode MOSFET
AP60N04DF Rve1.0
臺灣永源微電子科技有限公司
Description
The AP60N04DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP60N04DF
AP60N04DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
60
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
26
A
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
10
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
8
A
IDM
Pulsed Drain Current2
100
A
EAS
Single Pulse Avalanche Energy3
31
mJ
IAS
Avalanche Current
25
A
PD@TC=25℃
Total Power Dissipation4
34.7
W
PD@TA=25℃
Total Power Dissipation4
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient (Steady
State)1
62
℃
/W
RθJC
Thermal Resistance Junction-Case1
3.6
℃
/W
P
DFN3*3-8L
General Features
VDS = 40V ID =60 A
RDS(ON) < 15.5mΩ @ VGS=10V
Application
Battery protection
Load switch
Uninterruptible power supply


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