AP70P06PIT

-60V P-Channel Enhancement Mode MOSFET

AP70P06P/T RVE 1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V ID=-250μA

-60

-72

V

IDSS

Zero Gate Voltage Drain Current

VDS=-60V, VGS=0V

-1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250μA

-1

-1.8

-2.5

V

gFS

Forward Transconductance

VDS=-5V, ID=-20A

38

S

RDS(ON)

Drain-Source On-State Resistance

VGS=-10V, ID=-20A

11

14

mΩ

VGS=-4.5V, ID=-15A

14.3

18.6

mΩ

Ciss

Input Capacitance

VDS=-25V, VGS=0V, f=1.0MHz

8700

pF

Coss

Output Capacitance

290

pF

Crss

Reverse Transfer Capacitance

210

pF

td(on)

Turn-on Delay Time

VGS=-10V, VDS=-30V,

RL=1.5Ω, RGEN=3Ω

26

nS

tr

Turn-on Rise Time

21

nS

td(off)

Turn-Off Delay Time

138

nS

tf

Turn-Off Fall Time

30

nS

Qg

Total Gate Charge

VGS=-10V, VDS=-30V, ID=-20A

140

nC

Qgs

Gate-Source Charge

19

nC

Qgd

Gate-Drain Charge

28

nC

ISD

Source-Drain Current (Body Diode)

VGS=0V, IS=-20A

-70

A

VSD

Forward on Voltage (Note 3)

-1.2

V

trr

Reverse Recovery Time

IF=-20A, di/dt=100A/μs

56

ns

Qrr

Reverse Recovery Charge

IF=-20A, di/dt=100A/μs

63

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD =-48V,VGS =-10V,L=0.1mH,IAS =-41A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.