D3FS6

Schottky Barrier Diodes

60V, 3A

Feature

・Small SMD

・High Recovery Speed

・Low V

・Available for automotive use

・Pb free terminal

・RoHS:Yes

OUTLINE

Package (House Name): 2F

Equivalent circuit

Absolute Maximum Ratings (unless otherwise specified : Tl=25℃)

Item

Symbol

Conditions

Ratings

Unit

Storage temperrature

Tstg

-55 to 150

℃

Junction temperature

Tj

-55 to 150

℃

Repetitive peak reverse voltage

V

60

V

Repetitive peak surge reverse

voltage

V

Pulse width 0.5ms, duty=1/40

65

V

Average forward current

I (AV)

50Hz sine wave, Resistance load, Tl=87℃

3

A

Average forward current

I (AV)

50Hz sine wave, Resistance load, On alumina

substrate, Ta=25℃ ※

1.65

A

Average forward current

I (AV)

50Hz sine wave, Resistance load, On glass-epoxy

substrate, Ta=25℃ ※

1.05

A

Surge forward current

I

50Hz sine wave, Non-repetitive, 1cycle, Peak value,

Tj=25℃

80

A

Repetitive peak surge reverse

power

P

Pulse width 10µs, Tj=25℃

330

W

※︓See the original Specifications

F

RRM

RRSM

F

F

F

FSM

RRSM

Shindengen Electric Manufacturing Co., Ltd.

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D3FS6_Rev.01(2020.01)