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AP80G03GD 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP80G03GD 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 10 page ![]() AP80G03GD 30V N+P-Channel Enhancement Mode MOSFET AP80G03GD RVE1.0 永源微電子科技有限公司 Description The AP80G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =80A RDS(ON) < 6.5mΩ @ VGS=10V(Type:4.5mΩ) VDS = -30V ID =-72A RDS(ON) < 8.0mΩ @ VGS=-10V(Type:6.2mΩ) Application Boost driver Brushless motor Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP80G03GD TO-252-4L AP80G03GD XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±20 ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 80 -72 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 52.5 -57.5 A IDM Pulsed Drain Current2 243 -210 A EAS Single Pulse Avalanche Energy3 389 478 mJ IAS Avalanche Current 80 72 A PD@TC=25℃ Total Power Dissipation4 46 41.3 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62.5 ℃ /W RθJC Thermal Resistance Junction-Case1 1.3 ℃ /W |
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