AP80H06NF

60V N+N-Channel Enhancement Mode MOSFET

AP80H06NF REV1.0

永源微電子科技有限公司

Description

The AP80H06NF uses advanced APM-SGT V technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 65V ID =85A

RDS(ON) < 5.8mΩ @ VGS=10V （Type：4.8mΩ）

Application

BLDC

DC-DC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP80H06NF

PDN5*6-8L

AP80H06NF XXX YYYY

5000

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

60

V

VGS

Gate source voltage

±20

V

ID@TC=25

℃

Continuous drain current1)

80

A

ID@TC=100

℃

Continuous drain current1)

52

A

IDM

Pulsed drain current2)

328

A

IAS

Diode forward current

45

A

PD@TC=25

℃

Power dissipation

65.8

W

EAS

Single pulsed avalanche energy)

89

mJ

Tstg

，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

1.9

℃/W

RθJA

Thermal resistance, junction-ambient4)

25

℃/W