AP80N06NF

60V N-Channel Enhancement Mode MOSFET

AP80N06NF REV1.1

永源微电子科技有限公司

Description

The AP80N06NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =80A

RDS(ON) < 6.0mΩ @ VGS=10V （Type：4.5mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP80N06NF

PDN5*6-8L

AP80N06NF XXX YYYY

5000PCS

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

60

V

VGS

Gate source voltage

±20

V

ID@TC=25

℃

Continuous drain current1)

80

A

ID@TC=100

℃

Continuous drain current1)

45

A

IDM

Pulsed drain current2)

210

A

IAS

Diode forward current

70

A

PD@TC=25

℃

Power dissipation

87

W

EAS

Single pulsed avalanche energy)

66

mJ

Tstg

，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

1.44

℃/W

RθJA

Thermal resistance, junction-ambient4)

62

℃/W