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AP80N08NF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP80N08NF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 9 page ![]() AP80N08NF 80V N- Channel Enhancement Mode MOSFET AP80N08NF Rve2.0 臺灣永源微電子科技有限公司 Description The AP80N08NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 80V ID =80A RDS(ON) < 5.5mΩ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP80N08NF AP80N08NF XXX YYYY 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1,6 80 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1,6 42.5 A IDM Pulsed Drain Current2 170 A EAS Single Pulse Avalanche Energy3 57.8 mJ IAS Avalanche Current 34 A PD@TC=25℃ Total Power Dissipation4 56 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJC Thermal Resistance Junction-Case1 2.2 ℃/W PDFN5*6-8L |
유사한 부품 번호 - AP80N08NF |
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유사한 설명 - AP80N08NF |
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