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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AP80P01NF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP80P01NF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP80P01NF -12V P-Channel Enhancement Mode MOSFET AP80P01NF RVE1.0 臺灣永源微電子科技有限公司 Description The AP80P01NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -12V ID =-80A RDS(ON) < 4.5m Ω @ VGS=10V Application Load switch electronic cigarette Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP80P01NF PDFN5*6-8L AP80P01NF XXX YYYY 2500 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -12 V VGS Gate-Source Voltage ±12 V ID Drain Current – Continuous (TC=25℃) -80 A Drain Current – Continuous (TC=100℃) -54 A IDM Drain Current – Pulsed1 -240 A PD Power Dissipation (TC=25℃) 41.67 W Power Dissipation – Derate above 25℃ 0.33 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction to ambient 62 ℃/W RθJC Thermal Resistance Junction to Case 3 ℃/W |
유사한 부품 번호 - AP80P01NF |
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유사한 설명 - AP80P01NF |
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