VN10/0605/0610/2222 Series

Siliconix

P-37993—

Rev. C (08/08/94)

2

Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Parameter

Symbol

VN10LEb VN10LM VN0605T

VN0610LL

VN2222LL

VN2222LM

Unit

DrainSource Voltage

VDS

60

60

60

60

60

60

V

GateSource Voltage

VGS

"20

"30

"30

"30

"30

"30

V

Continuous Drain

Current

TA= 25_C

ID

0.38

0.32

0.18

0.28

0.23

0.26

A

Current

(TJ = 150_C)

TA= 100_C

ID

0.24

0.2

0.11

0.17

0.14

0.16

A

Pulsed Drain Currenta

IDM

1.0

1.4

0.72

1.3

1.0

1.0

Power Dissipation

TA= 25_C

PD

1.5

1.0

0.36

0.8

0.8

1.0

W

Power Dissipation

TA= 100_C

PD

0.6

0.4

0.14

0.32

0.32

0.4

W

Maximum Junctionto Ambient

RthJA

400

125

350

156

156

125

_C/

W

Operating Junction and

Storage Temperature Range

TJ, Tstg

-55 to 150

_C

Notes

a. Pulse width limited by maximum junction temperature.

b. Reference case for all temperature testing.

Specificationsa

Limits

VN10LE

VN10LM

VN0610LL

VN0605T

VN2222LL

VN2222LM

Parameter

Symbol

Test Conditions

Typb Min Max Min Max Min Max Unit

Static

DrainSource

Bkd

V l

V(BR)DSS

VGS = 0 V, ID = 100 mA

70

60

60

V

Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 10 mA

70

60

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 1 mA

2.1

0.8

2.5

0.8

3.0

0.6

2.5

GB d L k

I

VDS = 0 V, VGS = "20 V

"100

e

"10

0

"10

0

A

GateBody Leakage

IGSS

TJ=125_C

"50

0

nA

VDS = 0 V, VGS = "30 V

"100

ZG

V l

I

VDS = 50 V, VGS = 0 V

10

1.0

A

Zero Gate Voltage

Di C

IDSS

TJ= 125_C

500

500

mA

g

Drain Current

IDSS

VDS = 48 V, VGS = 0 V

10

mA

TJ= 125_C

500

OnState Drain Currentc

ID(on)

VDS = 10 V, VGS = 10 V

1000

750

500

750

mA

DiS

VGS = 4.5 V, ID = 50 mA

4.5

7.5

W

DrainSource

OR i

c

rDS(on)

VGS = 5 V, ID = 0.2 A

4.5

7.5

7.5

W

OnResistancec

rDS(on)

VGS = 10 V, ID = 0.5 A

2.4

5

5

7.5

W

TJ= 125_C

4.4

9

10

13.5

Forward

Td

c

gfs

VDS = 10 V, ID = 0.5 A

230

100

100

mS

Transconductancec

gfs

VDS = 10 V, ID = 0.2 A

180

80

mS

Common Source

Output Conductancec

gos

VDS = 5 V, ID = 50 mA

500

ms