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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AP100N02D 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP100N02D 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP100N02D 20V N-Channel Enhancement Mode MOSFET AP100N02D REV1.0 永源微電子科技有限公司 Description The AP100N02D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =100A RDS(ON) < 3.5mΩ@ VGS=4.5V (Type：2.8mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP100N02D TO252-3L AP100N02D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 100 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 59 A IDM Pulsed Drain Current note1 360 A EAS Single Pulsed Avalanche Energy note2 110 mJ PD Power Dissipation 81 W RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJC Thermal Resistance, Junction to Case 1.85 ℃/W TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ |
유사한 부품 번호 - AP100N02D |
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유사한 설명 - AP100N02D |
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